Laboratory for Pulsed Laser Deposition (PLD)
Laboratory for Pulsed Laser Deposition (PLD) consists of 2 PLD systems, UHV and HV, both conected to own glove boxes and allow transfer of the samples without exposure to air.
The UV KrF excimer laser with 248 nm wavelength is used for target ablation, creating a plasma plume that deposits onto a substrate. This method is used for fabricating complex oxide films, ferroelectrics, and other advanced materials with precise control over thickness and composition. PLD can accurately transfer the chemical composition of the target to the thin film. Additionally, the deposition rate is controlled by the number of laser pulses, allowing for nanometer-scale precision, where the vacuum or controlled atmosphere minimizes contamination, leading to high-quality films. By adjusting parameters (e.g., laser energy, background gas, substrate temperature), a wide range of material properties can be tailored. The film growth is monitored in situ with reflective high energy electron diffraction (RHEED).
We have expertizes in epitaxial, multilayer film growth for solid electrolyte batteries and semiconductor devices.
Within Center of Excellence in Nanoscience and Nanotechnology (Nanocenter) we installed pulsed laser deposition (PLD) system at our department, which is a powerful technique for thin-film growth of inorganic materials mainly. The delivered system is dedicated for layer-by-layer growth and thus enables preparation of high quality thin films and structuring on nanoscopic level. The system is equipped with following major components: heater stage for laser and resistive heating of substrates, target scanning stage, loadlock for sample and target transfer, high-pressure reflection high-energy electron diffraction system, upgrade with UHV pumps (titanium sublimation pump, ion pump), oxygen plasma source, sputter source (1 x 1.3” target), connection with a glovbox. For ablation of target material KrF excimer laser is used with energy up to 700 mJ per pulse and max. repetition rate of 50 Hz. For laser-energy setting and diagnostics attenuator and corresponding camera are used, respectively.The system is in-situ connected with a storage chamber and chamber for temperature desorption studies. In addition, using UHV suitcase as-prepared samples can be in-situ transferred from PLD chamber to different systems for structural, chemical and electrical characterization (XPS, JT-STM, 4-PROBE), which are all located at Jožef Stefan Institute.
Related equipment
Scale in the glove box (Mettler Toledo, XPR 105 DUE/M)
Person responsible: Dr. Darinka Primc
Analytical balance for measurements with high precision 0.1 mg.
UHV PLD Glovebox
Person responsible: Jan Žuntar
For storing air sensitive products, samples in nitrogen atmosphere.
Technical details
- Gas concentration measurements, O2 ~ 0-1000 ppm, H2O ~ 0-500 ppm,
- electrochemical O2 sensor resistant to solvents
- Argon working gas
- Automatic control of both antechambers – time controlled cycles
- Large (D = 40 cm) and small (D = 15 cm) antechambers for sample transfer
- Width: 120 cm; height: 90 cm; depth: 80 cm
HV PLD (Demcon TSST, custom made)
Person responsible: Blaž Jaklič
The HV PLD system is used for thin film growth of functional oxides used in energy storage and conversion devices. HV PLD system is vacuum-connected to a glove box that allows storage of reactive targets and transfer of thin films that are sensitive to ambient atosphere. This PLD system is equipped with reflective high-energy electron diffraction (RHEED) system, which enables the monitoring of thin layer growth and structural analysis of the surfaces of prepared samples. Resistive heater can be used for heating up the substrates up to 900°C. For the ablation of targets, additional optical elements are used for guiding the laser light from the existing KrF pulsed laser.
Technical details
- Temperature range RT to 900 °C with resistive heating
- Pressure range: 10-8 mbar - 1000 mbar
- RHEED gun for in-situ monitoring of surface structure
- oxygen, nitrogen, argon gas inlets
HV PLD Glovebox (MBRAUN, UNIlab CS2)
Person responsible: Jan Žuntar
For sample manipulation and storage under a controlled inert atmosphere (H2O and O2 levels < 1 ppm).
Technical details
- Gas concentration measurements, O2 ~ 0-1000 ppm, H2O ~ 0-500 ppm
- electrochemical O2 sensor resistant to solvents
- Argon working gas
- Automatic control of both antechambers – time controlled cycles
- Large (D = 40 cm) and small (D = 15 cm) antechambers for sample transfer
- Width: 120 cm; height: 90 cm; depth: 80 cm
UHV PLD (TSST, custom made)
Person responsible: Lucija Bučar
The UHV PLD system is specifically used for oxide thin film integration on semiconductor substrates, like Si and Ge. The system is equipped with an ion-getter pump, titanium sublimation pump, valves with metal seals and a bake-out tent that help to maintain an ultra-high vacuum environment (5 × 10-10 mbar). UHV PLD system is vacuum-connected to a glove box that allows storage of reactive targets, a storage chamber for storing up to 12 samples, and an analytical system for temperature-programmed desorption (TPD). This PLD system can also be connected to a vacuum suitcase, which enables the transfer of samples to devices for structural and chemical analysis (XPS, JT-STM) located within other departments of our Institute. It is equipped with reflective high-energy electron diffraction (RHEED) system, which enables the monitoring of thin layer growth and structural analysis of the surfaces of prepared samples. Apart from the resistive heater, a system for IR laser heating is also available enabling substrate heating up to 1200 °C. For the ablation of targets, additional optical elements can be used for guiding the laser light from the existing KrF pulsed laser.
Technical details
- Temperature range +25 to +1200 °C with infra-red laser, also possible resistive heating
- Pressure range: 10-8 mbar - 1000 mbar
- Residual gas analyzer
- Oxygen, nitrogen, argon gas inlets
- in situ transfer via UHV suitcase