NEW PUBLICATION - Heterogeneous Integration of Graphene and HfO2 Memristors

Dr. Urška Trstenjak, together with the Electronic Materials research group (PGI-7) from Forschungszentrum Jülich, has published a paper entitled “Heterogeneous Integration of Graphene and HfO2 Memristors” in Advanced Functional Materials (#Advancedfunctionalmaterials).

The team investigated the heterogeneous integration of hafnia on graphene. They showed that by replacing oxygen with Ar during PLD growth of hafnia, the underlying graphene is well preserved and can be used as a bottom electrode for memristive devices.
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